科技與工程學院
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沿革
科技與工程學院（原名為科技學院）於87學年度成立，其目標除致力於科技與工程教育師資培育外，亦積極培育與科技產業有關之工程及管理專業人才。學院成立之初在原有之工業教育學系、工業科技教育學系、圖文傳播學系等三系下，自91學年度增設「機電科技研究所」，該所於93學年度起設立學士班並更名為「機電科技學系」。本學院於93學年度亦增設「應用電子科技研究所」，並於96學年度合併工教系電機電子組成立「應用電子科技學系」。此外，「工業科技教育學系」於98學年度更名為「科技應用與人力資源發展學系」朝向培育科技產業之人力資源專才。之後，本院為配合本校轉型之規劃，增加學生於科技與工程產業職場的競爭，本院之「機電科技學系」與「應用電子科技學系」逐漸朝工程技術發展，兩系並於103學年度起分別更名為「機電工程學系」及「電機工程學系」。同年，本學院名稱亦由原「科技學院」更名為「科技與工程學院」。至此，本院發展之重點涵蓋教育（技職教育/科技教育/工程教育）、科技及工程等三大領域，並定位為以技術為本位之應用型學院。
107學年度，為配合本校轉型規劃，「光電科技研究所」由原隸屬於理學院改為隸屬本（科技與工程）學院，另增設2學程，分別為「車輛與能源工程學士學位學程」及「光電工程學士學位學程」。
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Item 利用鈣鈦礦結構薄膜對連續體束縛態之太赫茲光電調變研究(2024) 徐尉庸; Hsu, Wei-YungItem 基於鈣鈦礦薄膜之太赫茲調製器的連續體束縛態行為之研究(2023) 朱羿蓁; Chu, Yi-Chen在光學領域中，連續體束縛態調製器是一個引人注目的研究方向。透過對共振腔結構進行調變，我們可以探索新的束縛態位置並調整光場的分布，從而實現對光學信號的高度控制。然而，目前對於連續體束縛態調製器的理解還相對有限，尤其是在鈣鈦礦材料方面的應用尚未深入研究。本論文旨在通過在共振腔上鋪設鈣鈦礦薄膜，尋找新的連續體束縛態調製位置並探討其對共振模態的調節效果，也研究了不同鋪蓋方式和材料參數調節對共振模態的影響。這些結果為光學器件的設計和性能優化提供了重要的指導。未來的研究可以進一步探索不同材料參數的調節效果，並優化連續體束縛態調製器的設計，以提高其性能和應用範圍。同時，也可以考慮研究共振腔中其他材料的影響，以擴展連續體束縛態調製器在不同領域的應用潛力，通過對連續體束縛態調製器的探索，以及鈣鈦礦材料的應用，為我們理解光場控制和光學器件設計提供了新的思路和研究方向。Item A 30-60GHz CMOS sub-harmonic IQ de/modulator for high data-rate communication system applications(2009-01-22) Wei-Heng Lin; Wei-Lun Chang; Jeng-Han Tsai; Tian-Wei HuangA 30-60 GHz sub-harmonic IQ de/modulator using TSMC CMOS 0.13-mum process is presented in this paper. The IQ de/modulator consists of two FET resistive mixers, a 90deg coupler, and a Wilkinson power divider. The resistive mixer could simultaneously used as a up-converted or a down-converted mixer. Therefore, the measurement of the FET resistive mixer based modulator or demodulator will be done. The die size is 0.78 mm times 0.58 mm. Both IQ demodulator and modulator feature the conversion loss of -16plusmn1 dB and good demodulation and modulation capacity.Item 35-65-GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications(IEEE Microwave Theory and Techniques Society, 2007-10-01) Jeng-Han Tsai; Tian-Wei HuangSub-harmonic modulator and demodulator are presented in this paper using 0.13-mum standard CMOS technology for millimeter-wave (MMW) wireless gigabit direct-conversion systems. To overcome the main problem of local oscillator (LO) leakage in direct-conversion systems, the sub-harmonically pumped scheme is selected in this mixer design. An embedded four-way quadrature divider is utilized in the sub-harmonic Gilbert-cell design to generate quadrature-phases LO signals at MMW frequency. For broadband applications, a broadband matching design formula is provided in this paper to extend the operational frequency range from 35 to 65 GHz. To improve the flatness of conversion loss at high frequency, high-impedance compensation lines are incorporated between the transconductance stage and LO switching quad of the Gilbert-cell mixer to compensate the parasitic capacitance. The sub-harmonic modulator and demodulator exhibit 6 plusmn1.5 dB and 7.5 plusmn1.5 dB measured conversion loss, respectively, from 35 to 65 GHz. For MMW wireless gigabit applications, the gigabit modulation signal test is successfully performed through the direct-conversion system in this paper. To our knowledge, this is the first demonstration of the MMW CMOS sub-harmonic modulator and demodulator that feature broadband and gigabit applications.Item Design of 1.2 V broadband, high data-rate CMOS MMW I/Q modulator and demodulator using modified Gilbert-cell mixer(IEEE Microwave Theory and Techniques Society, 2011-05-01) Jeng-Han TsaiIn this paper, low-voltage evolution and high-speed operation mixer design are presented for millimeter-wave (MMW) CMOS in-phase/quadrature (I/Q) modulator and demodulator. The modified Gilbert-cell mixer architecture, which eliminates the three-level transistors stacking in the conventional Gilbert-cell mixer, can operate at a reduced supply voltage while maintaining reasonable performance. In addition, IF transimpedance amplifier buffer and wideband RF design are introduced to increase the operation speed of the mixer for MMW gigabit wireless transmission link applications. Using a 0.13-μm CMOS process, the I/Q modulator and demodulator formed with the modified Gilbert-cell mixers are demonstrated at the MMW. Under 1.2-V standard supply voltage, the modulator and demodulator exhibit excellent conversion gain (CG) flatness of -3.5 ±1.5 dB and -3 ±1.5 dB from 41 to 69.5 GHz and 31 to 69 GHz, respectively. For 60-GHz wireless personal area network applications, π/4 differential quadrature phase-shift keying, 16 quadrature amplitude modulation, and binary phase-shift keying modulation signal tests are successfully performed through the direct-conversion system. The results show that the presented monolithic microwave integrated circuits can operate at low-voltage and low-power while providing good CG and high data rate, even up to multigigabit.