化學系

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/57

國立臺灣師範大學化學系座落於公館校區理學院大樓。本系成立於民國五十一年，最初僅設大學部。之後於民國六十三年、七十八年陸續成立化學研究所碩士班和博士班。本系教育目標旨在培養化學專業人才與中等學校自然及化學專業師資，授課著重理論及應用性。本系所現有師資為專任教授25人，另外尚有與中央研究院合聘教授3位，在分析、有機、無機及物理化學四個學門的基礎上發展跨領域之教學研究合作計畫。此外，本系另有助教13位，職技員工1位，協助處理一般學生實驗及行政事務。學生方面，大學部現實際共322人，碩士班現實際就學研究生共174人，博士班現實際就學共55人。

本系一向秉持著教學與研究並重，近年來為配合許多研究計畫的需求，研究設備亦不斷的更新。本系所的研究計畫大部分來自國科會的經費補助。此外，本系提供研究生獎助學金，研究生可支領助教獎學金（TA）、研究獎學金（RA）和部分的個別教授所提供的博士班學生獎學金（fellowships）。成績優良的大學部學生也可以申請獎學金。

本校圖書館藏書豐富，除了本部圖書館外，分部理學院圖書館西文藏書現有13萬餘冊，西文期刊合訂本有911餘種期刊，將近約3萬冊。此外，西文現期期刊約450種，涵蓋化學、生化、生物科技、材料及其他科學類等領域。目前本系各研究室連接校園網路，將館藏查詢、圖書流通、期刊目錄轉載等功能，納入圖書館資訊系統中，並提供多種光碟資料庫之檢索及線上資料庫如Science Citation Index，Chemical Citation Index，Chemical Abstracts，Beilstein，MDL資料庫與STICNET全國科技資訊網路之查詢。

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    Preparation of Fluorescent Silica Nanotubes and their Application in Gene Delivery
    (Wiley-VCH Verlag, 2005-02-01) Chia-Chun Chen; Y.-C. Liu; C.-H. Wu; C.-C. Yeh; M.-T. Su; Y.-C. Wu
    Fluorescent silica nanotubes are synthesized through a sol–gel reaction using an anodic aluminum oxide membrane template. The nanotubes are filled with plasmid DNA encoding green fluorescence protein (GFP), which are incorporated into mammalian cells that subsequently express GFP (see Figure). The results demonstrate a novel application of nanotubes in biomolecule delivery.
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    Catalytic Growth and Characterization of Gallium Nitride Nanowires
    (American Chemical Society, 2001-03-28) Chia-Chun Chen; C.-C. Yeh; C.-H. Chen; M.-Y. Yu; H.-L. Liu; J.-J. Wu; K.-H. Chen; L.-C. Chen; J.-Y. Peng; Y.-F. Chen
    The preparation of high-purity and -quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction parameters were applied to systematically optimize and control the vapor−liquid−solid (VLS) growth of the nanowires. The resulting nanowires show predominantly wurtzite phase; they were up to several micrometers in length, typically with diameters of 10−50 nm. A minimum nanowire diameter of 6 nm has been achieved. Temperature dependence of photoluminescence spectra of the nanowires revealed that the emission mainly comes from wurtzite GaN with little contribution from the cubic phase. Moreover, the thermal quenching of photoluminescence was much reduced in the GaN nanowires. The Raman spectra showed five first-order phonon modes. The frequencies of these peaks were close to those of the bulk GaN, but the modes were significantly broadened, which is indicative of the phonon confinement effects associated with the nanoscale dimensions of the system. Additional Raman modes, not observed in the bulk GaN, were found in the nanowires. The field emission study showing notable emission current with low turn-on field suggests potential of the GaN nanowires in field emission applications. This work opens a wide route toward detailed studies of the fundamental properties and potential applications of semiconductor nanowires.
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    Preparation and Characterization of Carbon Nanotubes Encapsulated GaN Nanowires
    (Elsevier, 2001-09-10) Chia-Chun Chen; C.-C. Yeh; C.-H. Lang; C.-C. Lee; C.-H. Chen; M.-Y. Yu; H.-L. Liu; L.-C. Chen; Y.-S. Lin; K.-J. Ma; K.-H. Chen
    A novel two-step catalytic reaction is developed to synthesize gallium nitride nanowires encapsulated inside carbon nanotubes (GaN@CNT). The nanowires are prepared from the reaction of gallium metal and ammonium using metals or metal alloys as a catalyst. After the formation of the nanowires, carbon nanotubes are subsequently grown along the nanowires by chemical vapor deposition of methane. The structural and optical properties of pure GaN nanowires and GaN@CNT are characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. The results show that GaN nanowires are indeed encapsulated inside carbon nanotubes. The field emission studies show that the turn-on field of GaN@CNT is higher than that of carbon nanotubes, but substantially lower than that of pure GaN nanowires. This work provides a wide route toward the preparation and applications of new one-dimensional semiconductor nanostructures.
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    Infrared and Raman-Scattering Studies in Single-Crystalline GaN Nanowires
    (Elsevier, 2001-09-14) H.-L. Liu; Chia-Chun Chen; C.-T. Chia; C.-C. Yeh; C.-H. Chen; M.-Y. Yu; S. Keller; S. P. DenBaars
    Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼View the MathML source is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.