化學系
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國立臺灣師範大學化學系座落於公館校區理學院大樓。本系成立於民國五十一年，最初僅設大學部。之後於民國六十三年、七十八年陸續成立化學研究所碩士班和博士班。本系教育目標旨在培養化學專業人才與中等學校自然及化學專業師資，授課著重理論及應用性。本系所現有師資為專任教授25人，另外尚有與中央研究院合聘教授3位，在分析、有機、無機及物理化學四個學門的基礎上發展跨領域之教學研究合作計畫。此外，本系另有助教13位，職技員工1位，協助處理一般學生實驗及行政事務。學生方面，大學部現實際共322人，碩士班現實際就學研究生共174人，博士班現實際就學共55人。
本系一向秉持著教學與研究並重，近年來為配合許多研究計畫的需求，研究設備亦不斷的更新。本系所的研究計畫大部分來自國科會的經費補助。此外，本系提供研究生獎助學金，研究生可支領助教獎學金（TA）、研究獎學金（RA）和部分的個別教授所提供的博士班學生獎學金（fellowships）。成績優良的大學部學生也可以申請獎學金。
本校圖書館藏書豐富，除了本部圖書館外，分部理學院圖書館西文藏書現有13萬餘冊，西文期刊合訂本有911餘種期刊，將近約3萬冊。此外，西文現期期刊約450種，涵蓋化學、生化、生物科技、材料及其他科學類等領域。目前本系各研究室連接校園網路，將館藏查詢、圖書流通、期刊目錄轉載等功能，納入圖書館資訊系統中，並提供多種光碟資料庫之檢索及線上資料庫如Science Citation Index，Chemical Citation Index，Chemical Abstracts，Beilstein，MDL資料庫與STICNET全國科技資訊網路之查詢。
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Item Solution-Processable Pyrite FeS2 Nanocrystals for the Fabrication of Heterojunction Photodiodes with Visible to NIR Photodetection(Wiley-VCH Verlag, 2012-07-03) D.-Y. Wang; Y.-T. Jiang; C.-C. Lin; S.-S. Li; Y.T. Wang; Chia-Chun Chen; C.-W. ChenA heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS2 nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS2 nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a structure of ITO/ZnO/FeS2 NC/MoO3/Au, which exhibits an excellent photoresponse with a spectral response extended to NIR wavelengths of up to 1150 nm and a high photocurrent/dark current ratio of up to 8000 at -1 V under AM1.5 illumination (100 mW cm−2).Item Enhanced Infrared Light Harvesting of Inorganic Nanocrystal Photovoltaic and Photodetector on Graphene Electrode(American Institute of Physics, 2011-06-27) C.-C. Lin; D.-Y. Wang; K.-H. Tu; Y.-T. Jiang; M.-H. Hsieh; Chia-Chun Chen; C.-W. ChenWe demonstrate an enhancement of infrared light harvesting of inorganic PbSnanocrystalphotovoltaic and photodetectordevices based on the transparent grapheneelectrode. Due to high infrared transparency of the grapheneelectrode with respect to indium tin oxide (ITO), the infrared photoresponse of the graphene-based device is superior to the ITO-based counterpart, in spite of a higher sheet resistance of the grapheneelectrode. The outstanding infrared characteristics of the devices based on the grapheneelectrode make it a promising candidate for infrared optoelectronic applications such as solar cells, imaging and sensing, or optical communication.Item Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.(American Chemical Society, 2012-05-10) D.-Y. Wang; I.-S. Wang; I.-S. Huang; Y.-C. Yeh; S.-S. Li; K.-H. Tu; Chia-Chun Chen; C.-W. ChenIn this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.Item Direct evidence of type II band alignment in nanoscale P3HT/CdSe heterostructures(IOP Publishing, 2011-02-11) C.-H. Wang; C.-W. Chen; Y.-T. Chen; C.-T. Chen; Y.-F.Chen; S.-W. Chou; Chia-Chun ChenDue to inherent advantages of both constituent materials, organic/inorganic hybrid composites have attracted increasing attention. One of the fundamental issues needed to be resolved is their band alignment, which governs most of the electrical and optical properties. Here, we report the investigation of optical transition in poly(3-hexylthiophene) (P3HT)/CdSe nano-composites (NCs). It is found that the relaxation dynamics of photo-carriers in NCs is dominated by charge separation effects. Based on the band bending effect and the quantum confinement energy of electrons in the conduction band of CdSe quantum dots, we provide direct evidence of type II band alignment in P3HT/CdSe NCs. The establishment of a type II transition in NCs is very useful for the future design of efficient optoelectronic devices based on conjugated polymer/semiconductor hybrid systems.Item Extended Red Light Harvesting in a Poly(3-hexylthiophene)/Iron Disulfide Nanocrystal Hybrid Solar Cell(IOP Publishing, 2009-10-07) Y.-Y. Lin; D.-Y.Wang; H.-C. Yen; H.-L. Chen; Chia-Chun Chen; C.-M. Chen; C.-Y. Tang; C.-W. ChenA polymer solar cell based on poly(3-hexylthiophene) (P3HT)/iron disulfide (FeS2) nanocrystal (NC) hybrid is presented. The FeS2 NCs of 10 nm in diameter were homogeneously blended with P3HT to form an active layer of a solar cell. An extended red light harvesting up to 900 nm resulting from the NCs in the device has been demonstrated, compared to a typical absorption edge of 650 nm of a pristine P3HT. The environmentally friendly and low-cost FeS2 NCs can be used as a promising candidate for an acceptor in the polymer solar cell device application with an enhanced photovoltaic response in the extended red light region.Item Sharp Infrared Emission from Single-Crystalline Indium Nitride Nanobelts Prepared Using Guided-Stream Thermal Chemical Vapor Deposition(Wiley-VCH Verlag, 2006-03-01) M.-S. Hu; W.-M. Wang; T.-T. Chen; L.-S. Hong; C.-W. Chen; Chia-Chun Chen; Y.-F. Chen; K.-H. Chen; L.-C. ChenSingle-crystalline InN nanobelts have been synthesized using Au as the catalyst by a guided-stream thermal chemical vapor deposition technique. The resultant InN nanobelts typically have widths ranging from 20 to 200 nm, a width to thickness ratio of 2–10, and lengths of up to several tens of micrometers. Structural analysis shows that these InN nanobelts have a wurtzite structure and exhibit a rectangular cross section with self-selective facets, i.e., the nanobelts are enclosed only by ± (001) and ± (11?0) planes with [110] being the exclusive growth direction along their long axis. This facet selectivity can be understood by the differences in the surface energies of the different facets. Photoluminescence (PL) spectra of InN nanobelts show a sharp infrared emission peak at 0.76 eV with a full width at half maximum of 14 meV, narrower than the values reported for InN epilayers. The integrated PL intensity is found to increase linearly with the excitation power, which suggests that the observed PL can be attributed to direct band-to-band emission.