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Author: search.filters.author.蘇賢錫Subject: search.filters.subject.非晶

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    非晶半導體的瞬變電輸送
    (國立臺灣師範大學研究發展處, 1983-06-??) 蘇賢錫
    This paper ismainly concerned with the transient electric transport in amorphous semiconductors with very low energy excitation of infrared divergent nature. Moreover, it attempts to expound, with a modified Scher Montroll model, the discrepancy between temperature dependence of transit time given by time-of-fight experiments and other methods.
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    非晶半導體的能隙狀態密度
    (國立臺灣師範大學研究發展處, 1984-06-??) 蘇賢錫
    A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.