電機工程學系
Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/85
歷史沿革
本系成立宗旨在整合電子、電機、資訊、控制等多學門之工程技術，以培養跨領域具系統整合能力之電機電子科技人才為目標，同時配合產業界需求、支援國家重點科技發展，以「系統晶片」、「多媒體與通訊」、與「智慧型控制與機器人」等三大領域為核心發展方向，期望藉由學術創新引領產業發展，全力培養能直接投入電機電子產業之高級技術人才，厚植本國科技產業之競爭實力。
本系肇始於民國92年籌設之「應用電子科技研究所」，經一年籌劃，於民國93年8月正式成立，開始招收碩士班研究生，以培養具備理論、實務能力之高階電機電子科技人才為目標。民國96年8月「應用電子科技學系」成立，招收學士班學生，同時間，系所合一為「應用電子科技學系」。民國103年8月更名為「電機工程學系」，民國107年電機工程學系博士班成立，完備從大學部到博士班之學制規模，進一步擴展與深化本系的教學與研究能量。
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Item Ka頻帶升頻混頻器與I/Q調變器設計與實現(2016) 黃絹容; Huang, Chuan-Jung對於射頻收發器系統來說，混頻器與調變器扮演著相當重要的角色，為了達到混頻與高隔離度，現今，混頻器與調變器的設計以砷化鎵製程(GaAs process)為主。隨著CMOS的進步，近年來射頻電路大部份已經成功整合至CMOS 製程當中，且CMOS具有低功率消耗、低成本、高整合度的優勢，因此本論文將設計及實現Ka頻帶升頻混頻器、次諧波混頻器、I/Q調變器。 本論文將介紹第一個電路為Ka頻帶升頻混頻器，藉由電晶體偏壓操作在弱反轉區而達到低功率消耗與低LO驅動功率且有不錯的轉換增益。在IF端加入緩衝放大器(Buffer Amplifier)以提高功率增益。在LO驅動功率為0 dBm時，量測結果之頻帶為15-34 GHz、轉換增益為 1.5±2.5 dB、整體功率消耗約為2.5 mW，LO-IF與LO-RF的隔離度大於45 dB，晶片佈局面積為0.31 mm^2。 然而Ka頻帶升頻混頻器在LO頻率下的功率與低邊頻帶、高邊頻帶的訊號較相近，為了改善這個問題，因此將升頻混頻器延伸至次諧波混頻器降低LO端頻率，也可以降低鎖相迴路與壓控震盪器的設計難度。而第二個介紹的電路次諧波混頻器其2LO-IF與2LO-RF的隔離度大於58 dBm、LO-IF與LO-RF的隔離度大於51 dB，晶片面積為0.6156 mm^2。 為了提高系統的靈敏度，而設計第三個電路為應用於Ka頻帶的正交調變器。藉由輸入訊號分成I路徑、Q路徑兩個路徑，消除輸出高邊頻帶或低邊訊號其中一邊訊號來提高系統的靈敏度與整個系統的線性度。此電路最大特色為擁有較寬頻的鏡像拒斥比，其晶片面積為0.825 mm^2。Item A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-μm SiGe BiCMOS technology(2006-06-01) Ping-Chen Huang; Ren-Chieh Liu; Jeng-Han Tsai; Hong-Yeh Chang; Huei Wang; John Yeh,Chwan-Ying Lee; John ChernThis paper presents a compact 35-65 GHz Gilbert cell up-convert mixer implemented in TSMC 0.18- ȝm SiGe BiCMOS technology. Integrated broadband transformers and meandered thin-film microstrip lines were utilized to achieve a miniature chip area of 0.6 mm × 0.45 mm. The compact MMIC has a flat measured conversion loss of 7 ± 1.5 dB and LO suppression of more than 40 dB at the RF port from 35 to 65 GHz. The power consumption is 14 mW from a 4-V supply. This is a fully integrated millimeterwave active mixer that has the smallest chip area ever reported, and also the highest operation frequency among up-conversion mixers using silicon-based technology.Item A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology(IEEE Microwave Theory and Techniques Society, 2007-04-01) Jeng-Han Tsai; Pei-Si Wu; Chin-Shen Lin; Tian-Wei Huang; John G.J. Chern; Wen-Chu Huang; Huei WangA compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to dateItem Design of 1.2 V broadband, high data-rate CMOS MMW I/Q modulator and demodulator using modified Gilbert-cell mixer(IEEE Microwave Theory and Techniques Society, 2011-05-01) Jeng-Han TsaiIn this paper, low-voltage evolution and high-speed operation mixer design are presented for millimeter-wave (MMW) CMOS in-phase/quadrature (I/Q) modulator and demodulator. The modified Gilbert-cell mixer architecture, which eliminates the three-level transistors stacking in the conventional Gilbert-cell mixer, can operate at a reduced supply voltage while maintaining reasonable performance. In addition, IF transimpedance amplifier buffer and wideband RF design are introduced to increase the operation speed of the mixer for MMW gigabit wireless transmission link applications. Using a 0.13-μm CMOS process, the I/Q modulator and demodulator formed with the modified Gilbert-cell mixers are demonstrated at the MMW. Under 1.2-V standard supply voltage, the modulator and demodulator exhibit excellent conversion gain (CG) flatness of -3.5 ±1.5 dB and -3 ±1.5 dB from 41 to 69.5 GHz and 31 to 69 GHz, respectively. For 60-GHz wireless personal area network applications, π/4 differential quadrature phase-shift keying, 16 quadrature amplitude modulation, and binary phase-shift keying modulation signal tests are successfully performed through the direct-conversion system. The results show that the presented monolithic microwave integrated circuits can operate at low-voltage and low-power while providing good CG and high data rate, even up to multigigabit.