A 86- to 108-GHz Amplifier in 90-nm CMOS
| dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
| dc.contributor.author | Yu-Sian Jiang | en_US |
| dc.contributor.author | Zuo-Min Tsai | en_US |
| dc.contributor.author | Jeng-Han Tsai | en_US |
| dc.contributor.author | Hsien-Te Chen | en_US |
| dc.contributor.author | Huei Wang | en_US |
| dc.date.accessioned | 2014-10-30T09:28:44Z | |
| dc.date.available | 2014-10-30T09:28:44Z | |
| dc.date.issued | 2008-02-01 | zh_TW |
| dc.description.abstract | This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date. | en_US |
| dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04441360 | zh_TW |
| dc.identifier | ntnulib_tp_E0611_01_017 | zh_TW |
| dc.identifier.issn | 1531-1309 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32253 | |
| dc.language | en | zh_TW |
| dc.publisher | IEEE Microwave Theory and Techniques Society | en_US |
| dc.relation | IEEE Microwave and Wireless Components Letters, 18(2), 124-126. | en_US |
| dc.subject.other | Amplifier | en_US |
| dc.subject.other | CMOS | en_US |
| dc.subject.other | monolithic microwave integrated circuit (MMIC). | en_US |
| dc.title | A 86- to 108-GHz Amplifier in 90-nm CMOS | en_US |