X波段低雜訊放大器與K/Ka波段功率放大器之設計
dc.contributor | 蔡政翰 | zh_TW |
dc.contributor | Tsai, Jeng-Han | en_US |
dc.contributor.author | 顏辰洋 | zh_TW |
dc.contributor.author | Chen-Yang, Yen | en_US |
dc.date.accessioned | 2024-12-17T03:22:22Z | |
dc.date.available | 9999-12-31 | |
dc.date.issued | 2024 | |
dc.description.sponsorship | 電機工程學系 | zh_TW |
dc.identifier | 61175034H-46030 | |
dc.identifier.uri | https://etds.lib.ntnu.edu.tw/thesis/detail/b8c7f431e06bc0353adb164c7b272f02/ | |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/122934 | |
dc.language | 中文 | |
dc.subject | 互補式金屬氧化物半導體 | zh_TW |
dc.subject | 砷化鎵 | zh_TW |
dc.subject | 應變式異質接面高遷移率電晶體 | zh_TW |
dc.subject | 功率放大器 | zh_TW |
dc.subject | 低雜訊放大器 | zh_TW |
dc.subject | X頻段 | zh_TW |
dc.subject | K頻段 | zh_TW |
dc.subject | Ka頻段 | zh_TW |
dc.subject | strained heterojunction high mobility transistor | en_US |
dc.subject | gallium arsenide | en_US |
dc.subject | complementary metal oxide semiconductor | en_US |
dc.subject | power amplifier | en_US |
dc.subject | low noise amplifier | en_US |
dc.subject | X-band | en_US |
dc.subject | K-band | en_US |
dc.subject | Ka-band | en_US |
dc.title | X波段低雜訊放大器與K/Ka波段功率放大器之設計 | zh_TW |
dc.title | Design of X-band Low Noise Amplifiers Using 0.15-μm GaAs p-HEMT process and K-/Ka-band Power Amplifier Using 90-nm CMOS process | en_US |
dc.type | 學術論文 |