A W-band medium power amplifier in 90 nm CMOS
| dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
| dc.contributor.author | Yu-Sian Jiang | en_US |
| dc.contributor.author | Jeng-Han Tsai | en_US |
| dc.contributor.author | Huei Wang | en_US |
| dc.date.accessioned | 2014-10-30T09:28:44Z | |
| dc.date.available | 2014-10-30T09:28:44Z | |
| dc.date.issued | 2008-12-01 | zh_TW |
| dc.description.abstract | A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date. | en_US |
| dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4686756 | zh_TW |
| dc.identifier | ntnulib_tp_E0611_01_014 | zh_TW |
| dc.identifier.issn | 1531-1309� | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32250 | |
| dc.language | en | zh_TW |
| dc.publisher | IEEE Microwave Theory and Techniques Society | en_US |
| dc.relation | IEEE Microwave and Wireless Components Letters, 18(12), 818-820. | en_US |
| dc.subject.other | CMOS | en_US |
| dc.subject.other | microwave monolithic integrated circuit (MMIC) | en_US |
| dc.subject.other | power amplifier (PA) | en_US |
| dc.subject.other | W-band. | en_US |
| dc.title | A W-band medium power amplifier in 90 nm CMOS | en_US |