Self-Regulating and Diameter-Selective Growth of GaN Nanowires
| dc.contributor | 國立臺灣師範大學化學系 | zh_tw |
| dc.contributor.author | C.-K. Kuo | en_US |
| dc.contributor.author | C.-W. Hsu | en_US |
| dc.contributor.author | C.-T. Wu | en_US |
| dc.contributor.author | Z.-H. Lan | en_US |
| dc.contributor.author | C.-Y. Mou | en_US |
| dc.contributor.author | Y.-J. Yang | en_US |
| dc.contributor.author | Chia-Chun Chen | en_US |
| dc.contributor.author | K.-H. Chen | en_US |
| dc.date.accessioned | 2014-12-02T06:41:33Z | |
| dc.date.available | 2014-12-02T06:41:33Z | |
| dc.date.issued | 2006-06-14 | zh_TW |
| dc.description.abstract | We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process. | en_US |
| dc.description.uri | http://iopscience.iop.org/0957-4484/17/11/S17/pdf/0957-4484_17_11_S17.pdf | zh_TW |
| dc.identifier | ntnulib_tp_C0301_01_040 | zh_TW |
| dc.identifier.issn | 0957-4484 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42324 | |
| dc.language | en_US | zh_TW |
| dc.publisher | IOP Publishing | en_US |
| dc.relation | Nanotechnology, 17(11), S332-S337. | en_US |
| dc.relation.uri | http://dx.doi.org/10.1088/0957-4484/17/11/S17 | zh_TW |
| dc.title | Self-Regulating and Diameter-Selective Growth of GaN Nanowires | en_US |