應用於腦電波量測之三維乾式電極製作技術開發
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2007
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有鑑於近年來，腦電波雖然廣泛地應用於醫學臨床之診斷，與大腦人機界面系統，但其量測電極技術卻無顯著進步。故本研究提出一種新型腦波量測電極製造技術，利用微機電製程中，特有的矽基體型微加工技術、KMPR厚膜光阻微影、精密電鑄製程，並結合PDMS聚合物材料之選用。製造出於可撓曲基板上，擁有三維微探針陣列之乾式電極。有別於現今通用之銀/氯化銀電極，此新型量測電極，可於不需使用導電膠，且省略去角質等皮膚前處理的條件下，進行腦電波量測。
於實驗中，建立新型厚膜光阻KMPR 1050之相關製程參數，使得以一次旋轉塗佈的製程，便可得到厚度約130 um之光阻膜。配合KOH蝕刻、精密電鑄製程與本實驗所提出之二階段式光阻去除步驟，可製作出高度約170 um、寬為 50 um(深寬比為3.5)，且具出平面特性之微探針陣列。雖然此製程證明其製造上之可行性，但由於其製造良率低於50%。因此本研究中，提出三種改善良率之製程，藉以希望達到微機電製程中，特有的批次生產能力。
The research has developed a novel method of microneedle array through the combination of integrating silicon bulk micromachining, thick photoresist KMPR1050, electroforming and polymer material PDMS.The microneedle array was successful fabricated on a flexible PDMS substrate. This study complete establish experimental parameters of KMPR, and can produce thickness of 130 um KMPR by single spin. Combination of 130 um KMPR, KOH etching, electroforming, two-step removing KMPR, the length of the microneedle array is 170 um and width is 50 um (aspect ratio, 3.5) which is out of plane was successful fabricated on a flexible PDMS substrate.
The research has developed a novel method of microneedle array through the combination of integrating silicon bulk micromachining, thick photoresist KMPR1050, electroforming and polymer material PDMS.The microneedle array was successful fabricated on a flexible PDMS substrate. This study complete establish experimental parameters of KMPR, and can produce thickness of 130 um KMPR by single spin. Combination of 130 um KMPR, KOH etching, electroforming, two-step removing KMPR, the length of the microneedle array is 170 um and width is 50 um (aspect ratio, 3.5) which is out of plane was successful fabricated on a flexible PDMS substrate.
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腦電波, 乾式電極, KMPR厚膜光阻, 精密電鑄, EEG, dry electrode, KMPR thick photoresist, electroforming