非晶半導體的瞬變電輸送

dc.contributor.author蘇賢錫zh_tw
dc.date.accessioned2014-10-27T15:24:36Z
dc.date.available2014-10-27T15:24:36Z
dc.date.issued1983-06-??zh_TW
dc.description.abstractThis paper ismainly concerned with the transient electric transport in amorphous semiconductors with very low energy excitation of infrared divergent nature. Moreover, it attempts to expound, with a modified Scher Montroll model, the discrepancy between temperature dependence of transit time given by time-of-fight experiments and other methods.en_US
dc.identifier7930E38C-AD74-F279-9E74-5505CF36A218zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/17318
dc.language中文zh_TW
dc.publisher國立臺灣師範大學研究發展處zh_tw
dc.publisherOffice of Research and Developmenten_US
dc.relation(28),583-587zh_TW
dc.relation.ispartof師大學報zh_tw
dc.subject.other半導體zh_tw
dc.subject.other非晶zh_tw
dc.subject.other輸送zh_tw
dc.subject.other瞬變電zh_tw
dc.title非晶半導體的瞬變電輸送zh-tw
dc.title.alternativeThe Transient Electrical Transport in Amorphous Semiconductorszh_tw

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