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Design of a K-band Low Insertion Loss Variation Phase Shifter Using 0.18- μm CMOS Process
(2010-12-10) Chung-Han Wu; Wei-Tsung Li; Jeng-Han Tsai; Tian-Wei Huang
This paper demonstrates a k-band low insertion loss variation phase shifter with over 330° continuously phase tuning range from 21-25GHz in standard 0.18-μm CMOS technology. This phase shifter is composed of a 180° continuously phase tuning range reflection type phase shifter (RTPS) and a 180° discrete switch type phase shifter (STPS). The measured phase shift range is 336° with low loss variation of 1.3dB at 22GHz and the maximum insertion loss is 16 dB at 22GHz. To the best of authors' knowledge, the MMIC is the lowest insertion loss variation phase shifter in CMOS technology at 22GHz.
A 60-GHz CMOS power amplifier with built-in pre-distortion linearizer
(Institute of Electrical and Electronics Engineers (IEEE), 2011-12-01) Jeng-Han Tsai; Chung-Han Wu; Hong-Yuan Yang; Tian-Wei Huang
A built-in pre-distortion linearizer using cold-mode MOSFET with forward body bias is presented for 60 GHz CMOS PA linearization on 90 nm CMOS LP process. The power ampli- ﬁer (PA) achieves a of 10.72 dBm and of 7.3 dBm from 1.2 V supply. After linearization, the has been doubled from 7.3 to 10.2 dBm and the operating PAE at consequently improves from 5.4% to 10.8%. The optimum improvement of the IMD3 is 25 dB.