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Design of a K-band Low Insertion Loss Variation Phase Shifter Using 0.18- μm CMOS Process
(2010-12-10) Chung-Han Wu; Wei-Tsung Li; Jeng-Han Tsai; Tian-Wei Huang
This paper demonstrates a k-band low insertion loss variation phase shifter with over 330° continuously phase tuning range from 21-25GHz in standard 0.18-μm CMOS technology. This phase shifter is composed of a 180° continuously phase tuning range reflection type phase shifter (RTPS) and a 180° discrete switch type phase shifter (STPS). The measured phase shift range is 336° with low loss variation of 1.3dB at 22GHz and the maximum insertion loss is 16 dB at 22GHz. To the best of authors' knowledge, the MMIC is the lowest insertion loss variation phase shifter in CMOS technology at 22GHz.
A 24-GHz 3.8-dB NF Low-Noise Amplifier with Built-In Linearizer
(2010-12-10) Yen-Hung Kuo; Jeng-Han Tsai; Wei-Hung Chou; Tian-Wei Huang
A K-band low-noise amplifier with built-in linearizer using 0.18-μm CMOS technology is presented in this paper. To achieve good linearity at high frequency, a distributed derivative superposition linearization technique is used. The measured results show that the improvement of IIP3 and IM3 are 5.3 dB and 10.6 dB at 24 GHz, respectively. The proposed LNA has a noise figure of 3.8 dB and a peak gain of 13.7 dB while consuming 18 mW dc power. To the best of our knowledge, this is the first LNA with a built-in linearizer above 20 GHz in CMOS.