教師著作

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Author: search.filters.author.Wei-Chien ChenSubject: search.filters.subject.millimeter-wave (MMW)

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    A miniature Q-band low noise amplifier using 0.13-m CMOS technology
    (IEEE Microwave Theory and Techniques Society, 2006-06-01) Jeng-Han Tsai; Wei-Chien Chen; To-Po Wang; Tian-Wei Huang; Huei Wang
    A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.