教師著作

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    A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology
    (IEEE Microwave Theory and Techniques Society, 2007-04-01) Jeng-Han Tsai; Pei-Si Wu; Chin-Shen Lin; Tian-Wei Huang; John G.J. Chern; Wen-Chu Huang; Huei Wang
    A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date
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    A 30-100-GHz wideband sub-harmonic active mixer in 90-nm CMOS technology
    (IEEE Microwave Theory and Techniques Society, 2008-08-01) Jeng-Han Tsai; Hong-Yuan Yang; Tian-Wei Huang; Huei Wang
    This letter presents a 30-100 GHz wideband and compact fully integrated sub-harmonic Gilbert-cell mixer using 90 nm standard CMOS technology. The sub-harmonic pumped scheme with advantages of high port isolation and low local oscillation frequency operation is selected in millimeter-wave mixer design. A distributed transconductance stage and a high impedance compensation line are introduced to achieve the flatness of conversion gain over broad bandwidth. The CMOS sub-harmonic Gilbert-cell mixer exhibits -1.5 plusmn 1.5 dB measured conversion gain from 30 to 100 GHz with a compact chip size of 0.35 mm2. The OP1 dB of the mixer is -10.4 dBm and -9.6 dBm at 77 and 94 GHz, respectively. To the best of our knowledge, the monolithic microwave integrated circuit is the first CMOS Gilbert-cell mixer operating up to 100 GHz.